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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUY69A BUY69B BUY69C DESCRIPTION With TO-3 package High voltage capability APPLICATIONS For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO IN Collector-base voltage PARAMETER VCEO(SUS) Collector-emitter sustaining voltage CHA E SEM NG BUY69B BUY69C BUY69A BUY69B BUY69C Open base BUY69A Open emitter OND IC CONDITIONS TOR UC VALUE 1000 800 500 400 325 200 UNIT V V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector 8 10 15 3.0 V A A A W ae ae TC=25ae 100 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUY69A VCEO(SUS) Collector-emitter sustaining voltage BUY69B BUY69C BUY69A VCBO Collector-base voltage BUY69B BUY69C VCEsat VBEsat ICES IEBO hFE fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current IC=8A ;IB=2.5A IC=8A ;IB=2.5A IC=1mA; IE=0 IC=100mA ; IB=0 BUY69A BUY69B BUY69C SYMBOL CONDITIONS MIN 400 325 200 1000 800 500 TYP. MAX UNIT V V 3.3 2.2 V V mA mA VCE=rated VCES; VBE=0 VEB=8V; IC=0 Rise time DC current gain Transition frequency Switching times tr ts tf INC Fall time E SEM ANG H IC=2.5A ; VCE=10V IC=0.5A ; VCE=10V;f=1MHz OND IC TOR UC 1.0 15 10 0.3 1.8 1.0 |I |I |I 1.0 MHz s s s Storage time IC=5A ;IB1=-IB2=1.0A; VCC=250V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUY69A BUY69B BUY69C CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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